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philips semiconductors product specification powermos transistor BUK202-50X topfet high side switch description quick reference data monolithic temperature and symbol parameter min. unit overload protected power switch based on mosfet technology in a i l nominal load current (iso) 9 a 5 pin plastic envelope, configured as a single high side switch. symbol parameter max. unit applications v bg continuous off-state supply voltage 50 v general controller for driving i l continuous load current 20 a lamps, motors, solenoids, heaters. t j continuous junction temperature 150 ?c r on on-state resistance 38 m w features functional block diagram vertical power dmos switch low on-state resistance 5 v logic compatible input with hysteresis overtemperature protection - self resets with hysteresis overload protection against short circuit load with output current limiting; latched - reset by input high supply voltage load protection supply undervoltage lock out status indication for overload protection activated diagnostic status indication of open circuit load very low quiescent current voltage clamping for turn off of inductive loads esd protection on all pins reverse battery and overvoltage protection fig.1. elements of the topfet hss. with external ground resistor pinning - sot263 pin configuration symbol pin description 1 g round 2 i nput 3 b attery (+ve supply) 4 s tatus 5 l oad fig. 2. fig. 3. tab connected to pin 3 batt load input ground status power mosfet control & protection circuits 12345 263-01 leadform tab b g l i s hss topfet april 1995 1 rev 1.100
philips semiconductors product specification powermos transistor BUK202-50X topfet high side switch limiting values limiting values in accordance with the absolute maximum system (iec 134) symbol parameter conditions min. max. unit battery voltages v bg continuous off-state supply voltage - 0 50 v reverse battery voltages 1 external resistors: -v bg repetitive peak supply voltage r g 3 150 w ; r i = r s 3 4.7 k w , - 32 v d 0.1 -v bg continuous reverse supply voltage r g 3 150 w ; r i = r s 3 4.7 k w -16v i l continuous load current t mb 110 ?c - 20 a p d total power dissipation t mb 25 ?c - 125 w t stg storage temperature - -55 175 ?c t j continuous junction temperature 2 - - 150 ?c t sold lead temperature during soldering - 250 ?c input and status i i continuous input current - -5 5 ma i s continuous status current - -5 5 ma i i repetitive peak input current d 0.1 -20 20 ma i s repetitive peak status current d 0.1 -20 20 ma inductive load clamping e bl non-repetitive clamping energy t mb = 150 ?c prior to turn-off - 1.7 j esd limiting value symbol parameter conditions min. max. unit v c electrostatic discharge capacitor human body model; - 2 kv voltage c = 250 pf; r = 1.5 k w thermal characteristics symbol parameter conditions min. typ. max. unit thermal resistance 3 r th j-mb junction to mounting base - - 0.8 1 k/w r th j-a junction to ambient in free air - 60 75 k/w 1 reverse battery voltage is allowed only with external ground, input and status resistors to limit the currents to a safe value. 2 for normal continuous operation. a higher t j is allowed as an overload condition but at the threshold t j(to) the over temperature trip operates to protect the switch. 3 of the output power mos transistor. april 1995 2 rev 1.100
philips semiconductors product specification powermos transistor BUK202-50X topfet high side switch static characteristics t mb = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit clamping voltages v bg battery to ground i g = 1 ma 50 55 65 v v bl battery to load i l = i g = 1 ma 50 55 65 v -v lg negative load to ground i l = 1 ma 12 17 21 v supply voltage battery to ground v bg operating range 1 -5-40v currents v bg = 13 v i l nominal load current 2 v bl = 0.5 v; t mb = 85 ?c 9 - - a i b quiescent current 3 v ig = 0 v; v lg = 0 v - 0.1 2 m a i g operating current 4 v ig = 5 v; i l = 0 a 1.5 2.2 4 ma i l off-state load current 5 v bl = 13 v; v ig = 0 v - 0.1 1 m a resistances r on on-state resistance 6 v bg = 13 v; i l = 10 a; t p = 300 m s - 28 38 m w r on on-state resistance v bg = 5 v; i l = 2 a; t p = 300 m s - 36 48 m w input characteristics t mb = 25 ?c; v bg = 13 v symbol parameter conditions min. typ. max. unit i i input current v ig = 5 v 35 60 100 m a v ig input clamping voltage i i = 200 m a678v v ig(on) input turn-on threshold voltage - 2.1 2.4 v v ig(off) input turn-off threshold voltage 1.5 1.7 - v d v ig input turn-on hysteresis - 0.4 - v 1 on-state resistance is increased if the supply voltage is less than 9 v. refer to figure 8. 2 defined as in iso 10483-1. 3 this is the continuous current drawn from the battery when the input is low and includes leakage current to the load. 4 this is the continuous current drawn from the battery with no load connected, but with the input high. 5 the measured current is in the load pin only. 6 the supply and input voltage for the r on tests are continuous. the specified pulse duration t p refers only to the applied load current. april 1995 3 rev 1.100
philips semiconductors product specification powermos transistor BUK202-50X topfet high side switch protection functions and status indications truth table for normal, open-circuit load and overload conditions and abnormal supply voltages. functions truth table threshold symbol condition input status output min. typ. max. unit normal on-state 1 1 1 normal off-state 0 1 0 i l(oc) open circuit load 1 1 0 1 150 450 750 ma open circuit load 0 1 0 t j(to) over temperature 2 1 0 0 150 175 - ?c over temperature 3 00 0 v bl(to) short circuit load 4 1 0 0 9 10.5 12 v short circuit load 0 1 0 v bg(to) low supply voltage 5 x1 0345v v bg(lp) high supply voltage 6 x1 0404550v for input `0' equals low, `1' equals high, `x' equals don't care. for status `0' equals low, `1' equals open or high. for output switch `0' equals off, `1' equals on. status characteristics t mb = 25 ?c. the status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high. symbol parameter conditions min. typ. max. unit v sg status clamping voltage i s = 100 m a678v v sg status low voltage i s = 50 m a; v bg = 13 v - 0.7 0.8 v i s status leakage current v sg = 5 v - 0.1 1 m a i s status saturation current 7 v ss = 5 v; r s = 0 w ; v bg = 13 v - 9 - ma application information r s external pull-up resistor 8 v ss = 5 v - 100 - k w 1 in the on-state, the switch detects whether the load current is less than the quoted open load threshold current. this is for status indication only. typical hysteresis equals 230 ma. the thresholds are specified for supply voltage within the normal working range. 2 after cooling below the reset temperature the switch will resume normal operation. the reset temperature is lower than the tri p temperature by typically 10 ?c. 3 if the overtemperature protection has operated, status remains low to indicate the overtemperature condition even if the input is taken low, providing the device has not cooled below the reset temperature. 4 after short circuit protection has operated, the input voltage must be toggled low for the switch to resume normal operation. 5 undervoltage sensor causes the device to switch off. typical hysteresis equals 0.5 v. 6 overvoltage sensor causes the device to switch off to protect the load. typical hysteresis equals 1.1 v. 7 in a fault condition with the pull-up resistor short circuited while the status transistor is conducting. 8 the pull-up resistor also protects the status pin during reverse battery conditions. april 1995 4 rev 1.100
philips semiconductors product specification powermos transistor BUK202-50X topfet high side switch dynamic characteristics t mb = 25 ?c; v bg = 13 v symbol parameter conditions min. typ. max. unit inductive load turn-off -v lg negative load voltage 1 v ig = 0 v; i l = 10 a; t p = 300 m s152025v short circuit load protection 2 v ig = 5 v; r l 10 m w t d sc response time v ig = 5 v - 75 - m s i l load current prior to turn-off t < t d sc -50- a overload protection 3 i l(lim) load current limiting v bl = 9 v; t p = 300 m s344564a switching characteristics t mb = 25 ?c, v bg = 13 v, for resistive load r l = 13 w . symbol parameter conditions min. typ. max. unit during turn-on to v ig = 5 v t d on delay time to 10% v l -16- m s dv/dt on rate of rise of load voltage - 0.7 2 v/ m s t on total switching time to 90% v l - 140 - m s during turn-off to v ig = 0 v t d off delay time to 90% v l -40- m s dv/dt off rate of fall of load voltage - 0.7 2 v/ m s t off total switching time to 10% v l -70- m s capacitances t mb = 25 ?c; f = 1 mhz; v ig = 0 v symbol parameter conditions min. typ. max. unit c ig input capacitance v bg = 13 v - 15 20 pf c bl output capacitance v bl = v bg = 13 v - 500 700 pf c sg status capacitance v sg = 5 v - 11 15 pf 1 for a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. th is negative voltage is clamped by the device. 2 the load current is self-limited during the response time for short circuit load protection. response time is measured from wh en input goes high. 3 if the load resistance is low, but not a complete short circuit, such that the on-state voltage remains less than v bl(to) , the device remains in current limiting until the overtemperature protection operates. april 1995 5 rev 1.100
philips semiconductors product specification powermos transistor BUK202-50X topfet high side switch fig.4. high side switch measurements schematic. (current and voltage conventions) fig.5. normalised limiting power dissipation. p d % = 100 p d /p d (25 ?c) = f(t mb ) fig.6. limiting continuous on-state load current. i l = f(t mb ); conditions: v ig = 5 v, v bg = 13 v fig.7. typical on-state characteristics, t j = 25 ?c. i l = f(v bl ); parameter v bg ; t p = 250 m s fig.8. typical on-state resistance, t j = 25 ?c. r on = f(v bg ); conditions: i l = 10 a; t p = 300 m s fig.9. typical on-state resistance, t p = 300 m s. r on = f(t j ); parameter v bg ; condition i l = 2 a l i s topfet hss b g ib ig ii is il vbg vig vsg rs vlg load vbl 0 0.2 0.4 0.6 0.8 1 vbl / v il / a BUK202-50X 40 35 30 25 20 15 10 5 0 vbg / v = 13 5 6 7 0 20 40 60 80 100 120 140 tmb / c pd% normalised power derating 120 110 100 90 80 70 60 50 40 30 20 10 0 1 10 100 vbg / v ron / mohm BUK202-50X 50 40 30 20 10 0 0 20 40 60 80 100 120 140 tmb / c il / a BUK202-50X 20 10 0 -60 -20 20 60 100 140 180 tj / c ron / mohm BUK202-50X 80 70 60 50 40 30 20 10 0 5 v 13 v vbg = typ. april 1995 6 rev 1.100
philips semiconductors product specification powermos transistor BUK202-50X topfet high side switch fig.10. typical supply characteristics, 25 ?c. i g = f(v bg ); parameter v ig fig.11. typical operating supply current. i g = f(t j ); parameter v bg ; condition v ig = 5 v fig.12. typical supply quiescent current. i b = f(t j ); condition v bg = 13 v, v ig = 0 v, v lg = 0 v fig.13. typical off-state leakage current. i l = f(t j ); conditions: v bl = 13 v = v bg ; v ig = 0 v. fig.14. typical input characteristics, t j = 25 ?c. i i = f(v ig ); parameter v bg fig.15. typical input current, t j = 25 ?c. i i = f(v bg ); condition v ig = 5 v 0 20 40 60 vbg / v ig / ma BUK202-50X 5 4 3 2 1 0 operating quiescent clamping high voltage 10 30 50 vig = 3 v vig = 0 v -60 -20 20 60 100 140 180 tj / c il BUK202-50X 100 ua 10 ua 1 ua 100 na 10 na 1 na -60 -20 20 60 100 140 180 tj / c ig / ma BUK202-50X 3 2 1 0 vbg / v = 13 50 0 2 4 6 8 vig / v ii / ua BUK202-50X 200 150 100 50 0 vbg / v = 5 7 13 -60 -20 20 60 100 140 180 tj / c ib BUK202-50X 100 ua 10 ua 1 ua 100 na 10 na 0 20 40 vbg / v ii / ua BUK202-50X 100 80 60 40 20 0 10 30 50 april 1995 7 rev 1.100
philips semiconductors product specification powermos transistor BUK202-50X topfet high side switch fig.16. typical input threshold voltages. v ig = f(t j ); conditions v bg = 13 v, i l = 100 ma fig.17. typical input clamping voltage. v ig = f(t j ); conditions i i = 200 m a, v bg = 13 v fig.18. typical status characteristic, t j = 25 ?c. i s = f(v sg ); conditions v ig = v bg = 0 v fig.19. typical status leakage current. i s = f(t j ); conditions v sg = 5 v, v ig = v bg = 0 v fig.20. typical status low characteristic, t j = 25 ?c. i s = f(v sg ); conditions v ig = 5 v, v bg = 13 v, i l = 0 a fig.21. typical status low voltage, v sg = f(t j ). conditions i s = 50 m a, v ig = 5 v, v bg = 13 v, i l = 0 a -60 -20 20 60 100 140 180 tj / c vig / v BUK202-50X 3.0 2.5 2.0 1.5 1.0 vig(on) vig(off) -60 -20 20 60 100 140 180 tj / c is BUK202-50X 10 ua 1 ua 100 na 10 na -60 -20 20 60 100 140 180 tj / c vig / v BUK202-50X 8.0 7.5 7.0 6.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 vsg / v is / ua BUK202-50X 1000 800 600 400 200 0 0 2 4 6 8 10 vsg / v is / ma BUK202-50X 20 15 10 5 0 -60 -20 20 60 100 140 180 tj / c vsg / v BUK202-50X 1 0.8 0.6 0.4 0.2 0 april 1995 8 rev 1.100
philips semiconductors product specification powermos transistor BUK202-50X topfet high side switch fig.22. typical status clamping voltage, v sg = f(t j ). conditions i s = 100 m a, v bg = 13 v fig.23. low load current detection threshold. i l(oc) = f(t j ); conditions v ig = 5 v; v bg = 13 v fig.24. supply typical undervoltage thresholds. v bg(to) = f(t j ); conditions v ig = 3 v; i l = 100 ma fig.25. supply typical overvoltage thresholds. v bg(lp) = f(t j ); conditions v ig = 5 v; i l = 100 ma fig.26. typical battery to ground clamping voltage. v bg = f(t j ); parameter i g fig.27. typical negative load clamping characteristic. i l = f(v lg ); conditions v ig = 0 v, t p = 300 m s, 25 ?c -60 -20 20 60 100 140 180 tj / c vsg / v BUK202-50X 8.0 7.5 7.0 6.5 -60 -20 20 60 100 140 180 tj / c vbg(lp) / v BUK202-50X 46 45 44 43 42 on off -60 -20 20 60 100 140 180 tj / c il(oc) / a BUK202-50X 1.0 0.8 0.6 0.4 0.2 0 typ. max. min. -60 -20 20 60 100 140 180 tj / c vbg / v BUK202-50X 65 60 55 50 10 ua 1 ma ig = -60 -20 20 60 100 140 180 tj / c vbg(to) / v BUK202-50X 5 4 3 2 1 0 on off -24 -20 -16 -12 -8 -4 0 vlg / v il / a BUK202-50X 50 40 30 20 10 0 april 1995 9 rev 1.100
philips semiconductors product specification powermos transistor BUK202-50X topfet high side switch fig.28. typical negative load clamping voltage. v lg = f(t j ); parameter i l ; condition v ig = 0 v. fig.29. typical battery to load clamping voltage. v bl = f(t j ); parameter i l ; condition i g = 5 ma. fig.30. typical reverse battery characteristic. i g = f(v bg ); conditions i l = 0 a, t j = 25 ?c fig.31. typical reverse diode characteristic. i l = f(v bl ); conditions v ig = 0 v, t j = 25 ?c fig.32. typical output capacitance. t mb = 25 ?c c bl = f(v bl ); conditions f = 1 mhz, v ig = 0 v fig.33. typical overload characteristic, t mb = 25 ?c. i l = f(v bl ); condition v bg = 13 v; parameter t p -60 -20 20 60 100 140 180 tj / c vlg / v BUK202-50X -22 -20 -18 -16 -14 -12 -10 10 a 1 ma il = tp = 300 us -1.1 -0.9 -0.7 -0.5 -0.3 -0.1 vbl / v il / a BUK202-50X -10 -20 -30 -40 -50 0 -60 -20 20 60 100 140 180 tj / c vbl / v BUK202-50X 65 60 55 50 100 ua 1 ma 4 a il = tp = 300 us 0 20 40 vbl / v cbl BUK202-50X 10 nf 1 nf 100 pf 10 30 50 -1 -0.8 -0.6 -0.4 -0.2 0 vbg / v ig / ma BUK202-50X 0 -50 -100 -150 -200 0 4 8 12 16 20 24 vbl / v il / a BUK202-50X 70 60 50 40 30 20 10 0 current limiting i.e. before short circuit load trip 50 us tp = 300 us vbl(to) typ. april 1995 10 rev 1.100
philips semiconductors product specification powermos transistor BUK202-50X topfet high side switch fig.34. typical overload current, v bl = 9 v. i l = f(t mb ); conditions v bg = 13 v; t p = 100 m s fig.35. typical short circuit load threshold voltage. v bl(to) = f(v bg ); condition t mb = 25 ?c fig.36. typical short circuit load threshold voltage. v bl(to) = f(t mb ); condition v bg = 13 v fig.37. transient thermal impedance. z th j-mb = f(t); parameter d = t p /t -60 -20 20 60 100 140 180 tmb / c il(lim) / a BUK202-50X 70 60 50 40 30 20 10 0 -60 -20 20 60 100 140 180 tmb / c vbl(to) / v BUK202-50X 15 14 13 12 11 10 9 8 7 6 5 0 10 20 30 40 vbg / v vbl(to) / v BUK202-50X 12 11 10 9 100n 10u 1m 100m 10 t / s zth j-mb / (k/w) BUK202-50X 10 1 0.1 0.01 0.001 0 0.5 0.2 0.1 0.05 0.02 1u 100u 10m 1 d = t p t p t t p t d d = april 1995 11 rev 1.100
philips semiconductors product specification powermos transistor BUK202-50X topfet high side switch mechanical data dimensions in mm net mass: 2 g fig.38. sot263 leadform 263-01; pin 3 connected to mounting base. note 1. refer to mounting instructions for to220 envelopes. 2. epoxy meets ul94 v0 at 1/8". 10.3 max 3.6 2.8 3.5 max not tinned 2.4 0.6 4.5 max 5.9 min 15.8 max 1.3 1.7 (4 x) 0.9 max (5 x) 2.4 max 0.6 min 12 345 (1) (1) mounting base positional accuracy of the terminals is controlled in this zone only. 0.5 (1) (2) (2) terminal dimensions in this zone are uncontrolled. notes (4 x) 8.2 4.5 9.75 5.6 5 r 0.5 min r 0.5 min 0.4 m april 1995 12 rev 1.100
philips semiconductors product specification powermos transistor BUK202-50X topfet high side switch definitions data sheet status objective specification this data sheet contains target or goal specifications for product development. preliminary specification this data sheet contains preliminary data; supplementary data may be published later. product specification this data sheet contains final product specifications. limiting values limiting values are given in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of this specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the specification. philips electronics n.v. 1996 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. life support applications these products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. april 1995 13 rev 1.100

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